Doping-induced insulator-metal transition in the Lifshitz magnetic insulator NaOsO3
نویسندگان
چکیده
منابع مشابه
Infrared evidence of a Slater metal-insulator transition in NaOsO3
The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT sti...
متن کاملPressure-induced insulator-metal transition in EuMnO3.
We study the influence of external pressure on the electronic and magnetic structure of EuMnO3 from first-principles calculations. We find a pressure-induced insulator-metal transition at which the magnetic order changes from A-type antiferromagnetic to ferromagnetic with a strong interplay with Jahn-Teller distortions. In addition, we find that the non-centrosymmetric E *-type antiferromagneti...
متن کاملPressure-induced metal-insulator transition in MgV2O4
On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal-insulator transition takes place at high pressure (approximately 6 GPa) in MgV2O4.
متن کاملMetal Insulator Transition
Metal Insulator transition(MIT) is characterized by the conductivity which will be zero in the insulator phase. In this term paper, we focus on Mott insulator, and a simple theoritical way to describe this MIT is the Hubbard Model .Finally, we will look at the experiments of Mott insulator transition .
متن کاملElectrical oscillations induced by the metal-insulator transition in VO2
We systematically investigate the characteristics of an electrical oscillation observed in two-terminal vanadium dioxide VO2 devices. These oscillations are observed at room temperature in a simple electrical circuit without inductive components. The circuit is composed only of a dc voltage source, the VO2 device, and a standard resistor connected in series with the device. We explain why the o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2019
ISSN: 0953-8984,1361-648X
DOI: 10.1088/1361-648x/ab0dc4